EXTRACTION OF OXIDE THICKNESS FROM HARMONIC DISTORTION OF DISPLACEMENT CURRENTS IN MOS CAPACITORS

Authors
RICCO B TONDI G LANZONI M
Citation
B. Ricco et al., EXTRACTION OF OXIDE THICKNESS FROM HARMONIC DISTORTION OF DISPLACEMENT CURRENTS IN MOS CAPACITORS, I.E.E.E. transactions on electron devices, 44(9), 1997, pp. 1552-1554
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
44
Issue
9
Year of publication
1997
Pages
1552 - 1554
Database
ISI
SICI code
0018-9383(1997)44:9<1552:EOOTFH>2.0.ZU;2-A
Abstract
This brief presents a new experimental technique to determine the thic kness of (thin) insulator films from the analysis of the. harmonic dis torsion of the displacement current due to the nonlinearity of the C-V characteristics of MOS capacitors. Such a method substantially improv es the state of tile art, as it overcomes the noise problem affecting a precious technique, particularly suitable for thin insulators since it operates in the virtual absence of tunneling current and other comp lex phenomena.