RAPID THERMAL ANNEALING ON THE CHARACTERISTICS OF POLYSILICON THIN-FILM TRANSISTORS IN PRACTICAL TFT SRAM PROCESS

Authors
LEE KY FANG YK CHEN CW LIANG MS WUU SG
Citation
Ky. Lee et al., RAPID THERMAL ANNEALING ON THE CHARACTERISTICS OF POLYSILICON THIN-FILM TRANSISTORS IN PRACTICAL TFT SRAM PROCESS, I.E.E.E. transactions on electron devices, 44(9), 1997, pp. 1561-1562
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
44
Issue
9
Year of publication
1997
Pages
1561 - 1562
Database
ISI
SICI code
0018-9383(1997)44:9<1561:RTAOTC>2.0.ZU;2-A
Abstract
In the practical thin-film transistor (TFT) SRAM process, the rapid th ermal contact annealing (RTA) would seriously deteriorate the subthres hold characteristics of TFT's but it can improve the maximum transcond utance. We suggest that these degradations are due to the generation o f the deep states and we find these degradations can be recovered by a low-temperature anneal in H-2/N-2 gas ambient.