X-RAY PHOTOELECTRON-SPECTROSCOPY STUDY OF GAAS(110) CLEAVED IN ALCOHOLIC SULFIDE SOLUTIONS

Authors
BESSOLOV VN KONENKOVA EV LEBEDEV MV
Citation
Vn. Bessolov et al., X-RAY PHOTOELECTRON-SPECTROSCOPY STUDY OF GAAS(110) CLEAVED IN ALCOHOLIC SULFIDE SOLUTIONS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(4), 1997, pp. 876-879
Citations number
22
Categorie Soggetti
Physics, Applied
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
15
Issue
4
Year of publication
1997
Pages
876 - 879
Database
ISI
SICI code
1071-1023(1997)15:4<876:XPSOGC>2.0.ZU;2-A
Abstract
X-ray photoelectron spectroscopy has been used to study chemical bonds which appeared on the (110) surface of GaAs after cleavage of the cry stal in solutions of sodium sulfide in different alcohols. It has been shown that after such treatment the sulfur atoms are almost exclusive ly bended gallium atoms. This is conditioned by the electrostatic inte raction of sulfur ions in the solution with the surface ions of the cr ystal lattice of the semiconductor. (C) 1997 American Vacuum Society.