Gf. Mclane et al., DRY-ETCHING OF GERMANIUM IN MAGNETRON ENHANCED SF6 PLASMAS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(4), 1997, pp. 990-992
Magnetron enhanced reactive ion etching of germanium was investigated
in SF6 plasmas. Ge etch rates were determined as a function of cathode
power density (0.1-0.5 W/cm(2)), pressure (2-8 mTorr), and SF6 flow r
ate (2-11.5 seem). Etch rate increased as pressure and flow rate were
increased, but exhibited the unusual characteristic of decreasing as c
athode power was increased, Auger electron spectroscopy measurements s
howed the presence of a sulfur residue (<1 at. %) upon etching, while
scanning electron microscopy revealed that smooth etched surfaces were
attained in SF6 magnetron enhanced plasmas. (C) 1997 American Vacuum
Society.