ISOLATION OF A LATTICE-MISMATCHED ALINAS GAINAS LAYER ON INP USING ION-IMPLANTATION FOR HIGH-ENERGY MOBILITY TRANSISTOR REALIZATION/

Authors
FOURRE H PESANT JC SCHULER O CAPPY A
Citation
H. Fourre et al., ISOLATION OF A LATTICE-MISMATCHED ALINAS GAINAS LAYER ON INP USING ION-IMPLANTATION FOR HIGH-ENERGY MOBILITY TRANSISTOR REALIZATION/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(4), 1997, pp. 1008-1010
Citations number
10
Categorie Soggetti
Physics, Applied
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
15
Issue
4
Year of publication
1997
Pages
1008 - 1010
Database
ISI
SICI code
1071-1023(1997)15:4<1008:IOALAG>2.0.ZU;2-G
Abstract
In this communication, we present Ar+ implant isolation results of InG aAs/InAlAs/InP layers for high electron mobility transistor fabricatio n. Ar+ implantations were performed at 100 keV at room temperature wit h doses ranging from 5 X 10(12) to 10(15) at./cm(2). A sheet resistanc e of about 30 M Omega was measured after 10 hours annealing at 300 deg rees C. Using deep Auger analysis,we show that this high resistivity i s due to the intermixing of InGaAs and InAlAs layers. (C) 1997 America n Vacuum Society.