RAMAN-SPECTRA AS A MEASURE OF INTERFACE ALLOYING FOR IV IV SUPERLATTICES/

Citation
Ja. Zi et al., RAMAN-SPECTRA AS A MEASURE OF INTERFACE ALLOYING FOR IV IV SUPERLATTICES/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(4), 1997, pp. 1105-1107
Citations number
20
Categorie Soggetti
Physics, Applied
ISSN journal
10711023
Volume
15
Issue
4
Year of publication
1997
Pages
1105 - 1107
Database
ISI
SICI code
1071-1023(1997)15:4<1105:RAAMOI>2.0.ZU;2-S
Abstract
Raman spectra of strained (001)-oriented Si/Ge and alpha-Sn/Ge superla ttices with alloyed interfaces are calculated by a bond-polarizability model with lattice dynamical properties described by using a Keating model. The alloyed interface layers are treated by using a supercell t echnique. It is found that the Raman peaks around 410 cm(-1) of Si/Ge superlattices and 260 cm(-1) of alpha-Sn-Ge superlattices could be use d as a measure of interface alloying. (C) 1997 American Vacuum Society .