Ja. Zi et al., RAMAN-SPECTRA AS A MEASURE OF INTERFACE ALLOYING FOR IV IV SUPERLATTICES/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(4), 1997, pp. 1105-1107
Raman spectra of strained (001)-oriented Si/Ge and alpha-Sn/Ge superla
ttices with alloyed interfaces are calculated by a bond-polarizability
model with lattice dynamical properties described by using a Keating
model. The alloyed interface layers are treated by using a supercell t
echnique. It is found that the Raman peaks around 410 cm(-1) of Si/Ge
superlattices and 260 cm(-1) of alpha-Sn-Ge superlattices could be use
d as a measure of interface alloying. (C) 1997 American Vacuum Society
.