OPTICAL-TRANSITIONS IN INGAN ALGAN SINGLE QUANTUM-WELLS/

Citation
Kc. Zeng et al., OPTICAL-TRANSITIONS IN INGAN ALGAN SINGLE QUANTUM-WELLS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(4), 1997, pp. 1139-1143
Citations number
11
Categorie Soggetti
Physics, Applied
ISSN journal
10711023
Volume
15
Issue
4
Year of publication
1997
Pages
1139 - 1143
Database
ISI
SICI code
1071-1023(1997)15:4<1139:OIIASQ>2.0.ZU;2-V
Abstract
The optical transitions in InGaN/AlGaN single quantum wells (SQWs) gro wn by metal-organic chemical vapor deposition have been studied, The s pectral lineshape and the recombination dynamics of the optical transi tions have been systematically investigated at different conditions. I t was found that the main photoluminescence (PL) emission line in thes e SQW was contributed predominantly by the localized exciton recombina tion. However, time-resolved PL results revealed the presence of a ban d-to-impurity transition which cannot be resolved spectroscopically fr om the localized exciton transition line due to the broad emission lin ewidth. (C) 1997 American Vacuum Society.