Kc. Zeng et al., OPTICAL-TRANSITIONS IN INGAN ALGAN SINGLE QUANTUM-WELLS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(4), 1997, pp. 1139-1143
The optical transitions in InGaN/AlGaN single quantum wells (SQWs) gro
wn by metal-organic chemical vapor deposition have been studied, The s
pectral lineshape and the recombination dynamics of the optical transi
tions have been systematically investigated at different conditions. I
t was found that the main photoluminescence (PL) emission line in thes
e SQW was contributed predominantly by the localized exciton recombina
tion. However, time-resolved PL results revealed the presence of a ban
d-to-impurity transition which cannot be resolved spectroscopically fr
om the localized exciton transition line due to the broad emission lin
ewidth. (C) 1997 American Vacuum Society.