Jn. Gao et al., STUDY ON SURFACE AND INTERFACE STRUCTURES OF NANOCRYSTALLINE SILICON BY SCANNING-TUNNELING-MICROSCOPY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(4), 1997, pp. 1313-1316
The scanning tunneling microscope has been employed to study the morph
ology, atomic surface structures, and grain interface of hydrogenated
nanocrystalline silicon (nc-Si:H) before and after hydrofluoric acid (
HF) etching. It was found: (1) The nc-Si:H films were composed of many
different sizes of grains and these grains were composed of many fine
r grains. (2) There were line structures on the surface of the fine gr
ains and loop structures at the grain boundaries without HF treatment.
After etching, two more structures were observed: loop structures on
the surface of fine grains and spider bonding structures besides the i
nterface of fine grains. (3) The loop structures found at the grain bo
undaries was larger and more irregular than those on the grain surface
s. Line structures were similar to crystal silicon, but the distance b
etween lines was enlarged. Considering the experimental results, a dis
cussion was made about the formation mechanism of these atomic structu
res. (C) 1997 American Vacuum Society. [S0734-211X(97)12904-3].