H. Nakashima et K. Uozumi, NEGATIVE DIFFERENTIAL RESISTANCE ON SINGLE-ELECTRON TRANSPORT IN A JUNCTION ARRAY OF ULTRASMALL ISLANDS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(4), 1997, pp. 1411-1413
We predict a new type of negative differential resistance (NDR) in a n
onlinear ten-junction array of nine conducting islands with ultrasmall
self-capacitance. A main feature of our array is that two of the ten
junctions go in the direction opposite to an external in-plane electri
c field. The NDR characteristic is one of Coulomb blockade phenomena a
nd is triggered by competition between the two tunnel rates across two
specific junctions depending on the external voltage. Calculations fo
r the electron dynamics are based on the orthodox semiclassical single
electron tunneling model. (C) 1997 American Vacuum Society.