NEGATIVE DIFFERENTIAL RESISTANCE ON SINGLE-ELECTRON TRANSPORT IN A JUNCTION ARRAY OF ULTRASMALL ISLANDS

Citation
H. Nakashima et K. Uozumi, NEGATIVE DIFFERENTIAL RESISTANCE ON SINGLE-ELECTRON TRANSPORT IN A JUNCTION ARRAY OF ULTRASMALL ISLANDS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(4), 1997, pp. 1411-1413
Citations number
7
Categorie Soggetti
Physics, Applied
ISSN journal
10711023
Volume
15
Issue
4
Year of publication
1997
Pages
1411 - 1413
Database
ISI
SICI code
1071-1023(1997)15:4<1411:NDROST>2.0.ZU;2-Z
Abstract
We predict a new type of negative differential resistance (NDR) in a n onlinear ten-junction array of nine conducting islands with ultrasmall self-capacitance. A main feature of our array is that two of the ten junctions go in the direction opposite to an external in-plane electri c field. The NDR characteristic is one of Coulomb blockade phenomena a nd is triggered by competition between the two tunnel rates across two specific junctions depending on the external voltage. Calculations fo r the electron dynamics are based on the orthodox semiclassical single electron tunneling model. (C) 1997 American Vacuum Society.