X-RAY AND UV PHOTOELECTRON-SPECTROSCOPY OF OXIDE DESORPTION FROM INP UNDER AS-4 AND OR SB-4 OVERPRESSURES - EXCHANGE-REACTION AS-DOUBLE-LEFT-RIGHT-ARROW-SB ON INP SURFACES/

We report here on the oxide desorption of InP substrates in a molecula r beam epitaxy (MBE) chamber, under As-4 and/or Sb-4 overpressures. In situ characterizations including reflection high-energy electron diff raction (RHEED), X-ray photoelectron spectroscopy (XPS) and ultraviole t photoelectron spectroscopy (UPS) are used. We show that even if the deoxidation is feasible using one of the different beam pressures, the less critical temperature control leading to a good surface quality i s obtained under (As-4 + Sb-4) combined pressures. The oxide desorptio n is complete at a substrate temperature of 530 degrees C far below th e In-stabilized surface. In this case, XPS measurements show the forma tion of about 2 ML thick InAsxSb1-x layer on top of InP. An annealing of such a surface under As(Sb-4) up to 480 degrees C led to the format ion of similar to 2 ML thick pure InAs (InSb) layer on top of InP.