SUBLIMATION GROWTH AND CHARACTERIZATION OF BULK ALUMINUM NITRIDE SINGLE-CRYSTALS

Single crystalline platelets of aluminum nitride (AIN) less than or eq ual to 1 mm thick have been grown within the temperature range of 1950 -2250 degrees C on 10 x 10 mm(2) alpha(6H)-silicon carbide (SiC) subst rates via sublimation-recondensation in a resistively heated graphite furnace. The source material was sintered AIN. A maximum growth rate o f 500 mu m/h was achieved at 2150 degrees C and a source-to-seed separ ation of 4 mm. Growth rates below 2000 degrees C were approximately on e order of magnitude lower. Crystals grown at high temperatures ranged in color from blue to green due to the incorporation of Si and C from the SiC substrates; those grown at lower temperatures were colorless and transparent. Secondary-ion mass spectroscopy (SIMS) results showed almost a two order of magnitude decrease in the concentrations of the se two impurities in the transparent crystals. Plan view transmission electron microscopy (TEM) of these crystals showed no line or planar d efects. Raman spectroscopy and X-ray diffraction (XRD) studies indicat ed a strain free material.