PREFERRED [111] GROWTH OF ZNSE CRYSTALS FROM THE VAPOR DUE TO REPEATED TWINNING

Citation
E. Schonherr et al., PREFERRED [111] GROWTH OF ZNSE CRYSTALS FROM THE VAPOR DUE TO REPEATED TWINNING, Journal of crystal growth, 179(3-4), 1997, pp. 423-426
Citations number
14
Categorie Soggetti
Crystallography
Journal title
ISSN journal
00220248
Volume
179
Issue
3-4
Year of publication
1997
Pages
423 - 426
Database
ISI
SICI code
0022-0248(1997)179:3-4<423:P[GOZC>2.0.ZU;2-6
Abstract
ZnSe crystals develop preferably {1 1 0} faces. When three adjacent fa ces, e.g. (1 1 0)(H), (1 0 1)(H) and (0 1 1)(H) form a corner an ortho -twin is frequently generated at that particular tip. The (1 1 1) twin ning plane provides the initially hat twin with steps over the {1 1 0} (twin), side faces so that again a three-sided pyramid appears with a decreasing(1 I 1) top face. In contrast to the usual twin-induced [1 1 2] growth, the repeated twinning on the pyramid vertex leads to a pre ferred [1 1 1] growth.