K. Hayama et al., HETEROEPITAXIAL GROWTH OF AL2O3 FILM ON SI USING DIMETHYLETHYLAMINE-ALANE AND O-2, Journal of crystal growth, 179(3-4), 1997, pp. 433-437
Heteroepitaxial growth of Al2O3 film on Si substrate was carried out b
y gas-source metalorganic molecular-beam epitaxy using dimethylethylam
ine-alane (DMEAA) as an aluminum source and O-2 as an oxygen source. T
he epitaxial temperature decreased from 800 to 700 degrees C compared
with that using trimethylaluminum (TMA) as an aluminum source. It was
confirmed that the carbon contamination in the Al2O3 film grown with D
MEAA was lower than that of TMA at a relatively low temperature of 650
degrees C, although the film crystallinity degraded and the carbon co
ntamination increased with decreasing of growth temperature.