HETEROEPITAXIAL GROWTH OF AL2O3 FILM ON SI USING DIMETHYLETHYLAMINE-ALANE AND O-2

Citation
K. Hayama et al., HETEROEPITAXIAL GROWTH OF AL2O3 FILM ON SI USING DIMETHYLETHYLAMINE-ALANE AND O-2, Journal of crystal growth, 179(3-4), 1997, pp. 433-437
Citations number
8
Categorie Soggetti
Crystallography
Journal title
ISSN journal
00220248
Volume
179
Issue
3-4
Year of publication
1997
Pages
433 - 437
Database
ISI
SICI code
0022-0248(1997)179:3-4<433:HGOAFO>2.0.ZU;2-I
Abstract
Heteroepitaxial growth of Al2O3 film on Si substrate was carried out b y gas-source metalorganic molecular-beam epitaxy using dimethylethylam ine-alane (DMEAA) as an aluminum source and O-2 as an oxygen source. T he epitaxial temperature decreased from 800 to 700 degrees C compared with that using trimethylaluminum (TMA) as an aluminum source. It was confirmed that the carbon contamination in the Al2O3 film grown with D MEAA was lower than that of TMA at a relatively low temperature of 650 degrees C, although the film crystallinity degraded and the carbon co ntamination increased with decreasing of growth temperature.