HETEROEPITAXIAL GROWTH OF AL2O3 FILM ON SI USING DIMETHYLETHYLAMINE-ALANE AND O-2

Heteroepitaxial growth of Al2O3 film on Si substrate was carried out b y gas-source metalorganic molecular-beam epitaxy using dimethylethylam ine-alane (DMEAA) as an aluminum source and O-2 as an oxygen source. T he epitaxial temperature decreased from 800 to 700 degrees C compared with that using trimethylaluminum (TMA) as an aluminum source. It was confirmed that the carbon contamination in the Al2O3 film grown with D MEAA was lower than that of TMA at a relatively low temperature of 650 degrees C, although the film crystallinity degraded and the carbon co ntamination increased with decreasing of growth temperature.