HETEROEPITAXIAL GROWTH OF AL FILM ON SI USING DIMETHYLETHYLAMINE-ALANE

High purity Al films were epitaxially grown on Si substrates by gas-so urce metalorganic molecular-beam epitaxy method using dimethylethylami ne-alane as a source gas. Crystalline orientation of the Al films on t he Si(1 0 0) substrates was determined as Al(1 1 0)parallel to Si(1 0 0). The reflection high-energy electron diffraction patterns from the Al film grown at 500 degrees C showed streaky patterns. The growth rat e increased with increase of the growth temperature, and the activatio n energy of the growth rate was 0.28 eV, which was smaller than those of other alkyl Al sources. The carbon incorporation in the grown Al fi lm was smaller compared with those grown by other alkyl aluminum.