EFFECT OF GROWTH-PARAMETERS ON TIO2 THIN-FILMS DEPOSITED USING MOCVD

The goal of this paper is to characterize the performance of an invert ed vertical MOCVD reactor used for the deposition of titanium dioxide thin films. Utilizing two-and three-dimensional numerical simulation t o gain a more complete understanding of the fundamental relationships underlying the epitaxial growth process, we develop a model to predict gas velocity, temperature distribution, concentration of reactant gas , and deposition rate. A 3D model is used to explain experimentally ob served off-axis deposition of grown films. The model is also used to f ind the control mechanism for different process conditions. Simulation s are compared to experimental results, and excellent agreement is obt ained.