PROBING BY IN-SITU SCANNING-TUNNELING-MICROSCOPY THE INFLUENCE OF AN ORGANIC ADDITIVE ON SI ETCHING IN NAOH

Authors
ALLONGUE P BERTAGNA V KIELING V GERISCHER H
Citation
P. Allongue et al., PROBING BY IN-SITU SCANNING-TUNNELING-MICROSCOPY THE INFLUENCE OF AN ORGANIC ADDITIVE ON SI ETCHING IN NAOH, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(3), 1994, pp. 1539-1542
Citations number
26
Categorie Soggetti
Physics, Applied
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
12
Issue
3
Year of publication
1994
Pages
1539 - 1542
Database
ISI
SICI code
1071-1023(1994)12:3<1539:PBISTI>2.0.ZU;2-V
Abstract
The etching of Si in alkaline solution is used to fabricate microstruc tures. A recent study has described the etching reaction at a molecula r level. The present paper studies, with in situ scanning tunneling mi croscopy, the effect of a surfactant (triton) on Si etching and its co nsequences regarding the resulting surface topography, which is an imp ortant question in the preparation of substrates.