STUDY OF ION-BOMBARDMENT INDUCED VACANCY ISLANDS ON AU(100) BY SCANNING-TUNNELING-MICROSCOPY

Authors
GAUTHIER S SAMSON Y GIRARD JC ROUSSET S KLEIN J
Citation
S. Gauthier et al., STUDY OF ION-BOMBARDMENT INDUCED VACANCY ISLANDS ON AU(100) BY SCANNING-TUNNELING-MICROSCOPY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(3), 1994, pp. 1754-1757
Citations number
16
Categorie Soggetti
Physics, Applied
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
12
Issue
3
Year of publication
1994
Pages
1754 - 1757
Database
ISI
SICI code
1071-1023(1994)12:3<1754:SOIIVI>2.0.ZU;2-E
Abstract
The influence of the anisotropy of the (5Xn) reconstructed (100) face of gold on the generation of vacancy islands by sputtering with 600 eV Ar+ ions has been investigated by scanning tunneling microscopy. The shapes of these islands, bounded by monoatomic steps, are shown to be growth shapes, rather than equilibrium shapes. The growth mechanisms l eading to these shapes are discussed.