Cl. Bai et al., MICROSTRUCTURE OF NANOSIZE HYDROGENATED CRYSTALLINE SILICON STUDIED BY SCANNING-TUNNELING-MICROSCOPY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(3), 1994, pp. 1823-1826
The morphology of nanosize hydrogenated crystalline silicon (nc-Si:H)
films have been investigated by scanning tunneling microscopy (STM) wi
thout hydrofluoric acid etching under atmospheric conditions. Images f
rom submicrometer scale down to atomic scale have been represented. On
a large scale, the nc-Si:H films are found to be consisted of microcr
ystallites separated by different interfacial regions from STM results
. The mean size of microcrystallites is about 3-5 nm, which is in agre
ement with high-resolution electron microscopy studies. In addition, n
ear-atomic resolution STM images provide some information on the inter
facial region, which seems to be crucial for the atomic structure and
many properties of nanocrystalline materials. The results show that th
e arrangements of the atoms on nanocrystallites are well ordered, whil
e atoms in the interfacial regions are randomly distributed. The mecha
nism for imaging nc-Si:H is discussed.