SCANNING PROBE MICROSCOPY ON THE SURFACE OF SI(111)

Authors
MEYER E HOWALD L LUTHI R HAEFKE H RUETSCHI M BONNER T OVERNEY R FROMMER J HOFER R GUNTHEROIDT HJ
Citation
E. Meyer et al., SCANNING PROBE MICROSCOPY ON THE SURFACE OF SI(111), Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(3), 1994, pp. 2060-2063
Citations number
23
Categorie Soggetti
Physics, Applied
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
12
Issue
3
Year of publication
1994
Pages
2060 - 2063
Database
ISI
SICI code
1071-1023(1994)12:3<2060:SPMOTS>2.0.ZU;2-3
Abstract
An ultrahigh vacuum atomic force microscope, operated in the noncontac t mode, is used to characterize n-doped Si(111) surfaces. Ionized impu rities are observed with electrostatic forces, demonstrating contrast reversal by changing the polarity of the voltage between probing tip a nd sample. The impurities form one-dimensional domains on the silicon surface. Steps and lines, connecting kink sites, are preferentially oc cupied by these impurities.