GROWTH MODE AND SURFACE-STRUCTURES ON THE PB SI(001) SYSTEM OBSERVED BY SCANNING-TUNNELING-MICROSCOPY/

Authors
ITOH H TANABE H WINAU D SCHMID AK ICHINOKAWA T
Citation
H. Itoh et al., GROWTH MODE AND SURFACE-STRUCTURES ON THE PB SI(001) SYSTEM OBSERVED BY SCANNING-TUNNELING-MICROSCOPY/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(3), 1994, pp. 2086-2089
Citations number
10
Categorie Soggetti
Physics, Applied
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
12
Issue
3
Year of publication
1994
Pages
2086 - 2089
Database
ISI
SICI code
1071-1023(1994)12:3<2086:GMASOT>2.0.ZU;2-E
Abstract
Growth mode and surface structures of the Pb/Si(001) system have been investigated by scanning tunneling microscopy. The growth mode is the Stranski-Krastanov type and Pb grows layer by layer up to three layers before three dimensional (3D) nucleation of Pb islands occurs. The st ructure of the first layer changes from 2X2 and 2X1, passing through i ntermediate phases of 2X4 and c(8X4) with mixing by increasing Pb cove rage. The second layer is a 2X1 structure, and the third layer is a c( 4X4) structure. 3D islands of triangular shapes grow on the third laye r of c(4X4) in an orientation of Pb(111)\\Si(001) at coverages higher than 2 monolayers.