SCANNING-TUNNELING-MICROSCOPY AND SPECTROSCOPY OF MOS(2) THIN-FILMS PREPARED BY AN INTERCALATION EXFOLIATION METHOD

Authors
MANIVANNAN A SANTIAGO Y CABRERA CR
Citation
A. Manivannan et al., SCANNING-TUNNELING-MICROSCOPY AND SPECTROSCOPY OF MOS(2) THIN-FILMS PREPARED BY AN INTERCALATION EXFOLIATION METHOD, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(3), 1994, pp. 2111-2114
Citations number
35
Categorie Soggetti
Physics, Applied
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
12
Issue
3
Year of publication
1994
Pages
2111 - 2114
Database
ISI
SICI code
1071-1023(1994)12:3<2111:SASOMT>2.0.ZU;2-M
Abstract
Exfoliated MoS2 thin films on titanium substrates have been investigat ed by scanning tunneling microscopy (STM) and spectroscopy (STS). Sing le layers of MoS2 Were placed on titanium substrates by an intercalati on-exfoliation method. These layers consist of several hexagonal islan ds of surface atoms on the basal planes as well as axial planes with d angling bonds. The STS measurements showed a surface band gap value of 0.3 eV, which is lower than the value obtained on a single crystal of MoS2 (0.8 eV). Thus the differential conductivity measurements indica te that these films have a high density of states and conductivity due to the presence of a large number of axial lanes at the interface.