SPIRAL GROWTH OF GAAS BY METALORGANIC VAPOR-PHASE EPITAXY

Authors
HSU CC LU YC XU JB WONG TKS WILSON IH
Citation
Cc. Hsu et al., SPIRAL GROWTH OF GAAS BY METALORGANIC VAPOR-PHASE EPITAXY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(3), 1994, pp. 2115-2117
Citations number
6
Categorie Soggetti
Physics, Applied
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
12
Issue
3
Year of publication
1994
Pages
2115 - 2117
Database
ISI
SICI code
1071-1023(1994)12:3<2115:SGOGBM>2.0.ZU;2-N
Abstract
Growth spirals are observed on metalorganic vapor phase epitaxy grown GaAs surfaces by atomic force microscopy. The growth mechanism is acco rding to the classical Burton-Cabrera-Frank theory. Spirals originate from screw dislocations. Successive turns of the steps are sent out by the dislocations. These steps are of monolayer height (0.28 nm) and t he interstep distance is around 150 nm.