INGAASSB GROWTH FROM SB-RICH SOLUTIONS

In this article, we discuss the advantages of using Sb as a solvent fo r the growth of antimony-based solid solutions. We developed the LPE g rowth technology of InGaAsSb layers from Sb-rich liquid phases on GaSb substrates in both sides of the miscibility gap, near GaSb and near I nAs. A strong substrate orientation influence was found on the effecti ve segregation coefficients of components. The InGaAsSb;GaSb structure s were studied by double-crystal X-ray diffraction. From a study of th e variation of the rocking curves' half-width with supercooling temper ature, it is possible to optimize the technological growth conditions. It is shown that high-quality InGaAsSb epitaxial layers can be produc ed by this technique.