MOLECULAR-BEAM EPITAXIAL-GROWTH AND PROPERTIES OF HIGH-QUALITY ZNSXSE1-X ON GAAS(001) SUBSTRATE

We have studied molecular beam epitaxial growth of high-quality ZnSSe on GaAs substrates. From the results obtained by pyrometric oscillatio n behavior and X-ray rocking curve simulation, a new technique, called a three-step temperature correction method, is introduced. In this me thod, the temperature correction region is divided into T-1 for compen sating the heating effect by radiation, T-2 for connecting the inverse gradient of temperature in T-1 and T-2, and T-3 for compensating the temperature drop during ZnSxSe1-x growth. Applying this method to ZnSx Se1-x epitaxial layer growth on GaAs substrates, layers with better cr ystallinity are reproducibly grown as evaluated by the full-width at h alf-maximum of the double-crystal X-ray rocking curves, etch pit densi ty, and photoluminescence. An etch pit density of less than or equal t o 5 x 10(3) cm(-2) and photoluminescence broadening of about 1.8 meV a t 4.2 K could be obtained for ZnSxSe1-x with x = 0.06.