FIRST PRINCIPLES CALCULATIONS OF SI(211) SURFACE RECONSTRUCTIONS

Authors
Citation
Ch. Grein, FIRST PRINCIPLES CALCULATIONS OF SI(211) SURFACE RECONSTRUCTIONS, Journal of crystal growth, 180(1), 1997, pp. 54-60
Citations number
20
Categorie Soggetti
Crystallography
Journal title
ISSN journal
00220248
Volume
180
Issue
1
Year of publication
1997
Pages
54 - 60
Database
ISI
SICI code
0022-0248(1997)180:1<54:FPCOSS>2.0.ZU;2-O
Abstract
Total energy calculations are performed on ideal and reconstructed sur faces of silicon (211). Specifically, the surface energies of 2 x 1 an d rebonded 1 x 1 reconstructions are reported. Our calculations predic t the 1 x 1 reconstruction to be more stable. While bond stretching an d bending energies an less in the 2 x 1 reconstruction, the density of dangling bonds is greater and hence so also is the surface energy.