Total energy calculations are performed on ideal and reconstructed sur
faces of silicon (211). Specifically, the surface energies of 2 x 1 an
d rebonded 1 x 1 reconstructions are reported. Our calculations predic
t the 1 x 1 reconstruction to be more stable. While bond stretching an
d bending energies an less in the 2 x 1 reconstruction, the density of
dangling bonds is greater and hence so also is the surface energy.