FORMATION PROCESS OF GROWN-IN DEFECTS IN CZOCHRALSKI-GROWN SILICON-CRYSTALS

We have determined the set of the diffusion coefficients (D-v: vacanci es, D-i: self-interstitials) and equilibrium concentrations (C-v(eq): vacancies, C-i(eq): self-interstitials) of point defects which has bee n satisfied with the dependence of two-dimensional defect patterns on V and G (V: growth rate, G: axial temperature gradient) and with the r eported product values of DVCveq and DiCieq. Recently, it has been rep orted by direct TEM (Transmission Electron Microscopy) observation tha t the grown-in defects in the vacancy dominant region are the voids of octahedral shape. The idea that the grown-in defects are the voids fo rmed by the vacancy aggregation has been examined by the simulation mo del. It is shown that this model can well describe the behaviors of gr own-in defect formation during the crystal growth and that it is possi ble to form the void as the grown-in defect in CZ silicon crystals.