MECHANISMS OF STRAIN-INDUCED ROUGHENING AND DISLOCATION MULTIPLICATION IN SIXGE1-X THIN-FILMS

Authors
JESSON DE CHEN KM PENNYCOOK SJ THUNDAT T WARMACK RJ
Citation
De. Jesson et al., MECHANISMS OF STRAIN-INDUCED ROUGHENING AND DISLOCATION MULTIPLICATION IN SIXGE1-X THIN-FILMS, Journal of electronic materials, 26(9), 1997, pp. 1039-1047
Citations number
41
Categorie Soggetti
Engineering, Eletrical & Electronic","Material Science
Journal title
Journal of electronic materials → ACNP
ISSN journal
03615235
Volume
26
Issue
9
Year of publication
1997
Pages
1039 - 1047
Database
ISI
SICI code
0361-5235(1997)26:9<1039:MOSRAD>2.0.ZU;2-G
Abstract
We discuss the stress driven roughening transition of SixGe1-x thin fi lms. In the case of annealed films, nucleation effects dominate the na ture of the surface ripple which formed by a cooperative nucleation me chanism. Individual islands appear to nucleate via multilayer fluctuat ions. Faceting can however be suppressed at high supersaturations, res ulting in a transition with characteristics of the Asaro-Tiller-Grinfe ld instability. The relationship between morphological evolution and d islocation nucleation and multiplication is considered.