ANALYSIS OF IODINE INCORPORATION IN MBE GROWN CDTE AND HGCDTE

Authors
PARIKH A PEARSON SD WAGNER BK SUMMERS CJ
Citation
A. Parikh et al., ANALYSIS OF IODINE INCORPORATION IN MBE GROWN CDTE AND HGCDTE, Journal of electronic materials, 26(9), 1997, pp. 1065-1069
Citations number
11
Categorie Soggetti
Engineering, Eletrical & Electronic","Material Science
Journal title
Journal of electronic materials → ACNP
ISSN journal
03615235
Volume
26
Issue
9
Year of publication
1997
Pages
1065 - 1069
Database
ISI
SICI code
0361-5235(1997)26:9<1065:AOIIIM>2.0.ZU;2-P
Abstract
A study is reported of the dynamics of dopant incorporation in iodine doped CdTe. Using a mathematical formulation, the iodine doping profil es in CdTe and HgCdTe have been fitted to experiment to obtain materia l parameters such as the bulk and surface diffusion and the segregatio n energy. Dopant profile fitting showed that iodine diffusion was insi gnificant and gave an iodine segregation energy of 0.6 eV and a surfac e diffusivity enhancement factor of 300 at a growth temperature of 230 degrees C. The model was used to determine the effect of the growth r ate and temperature for particular growth conditions.