THERMALLY STIMULATED AND PHOTOELECTRIC EFFECTS IN SILICON DOPED WITH GOLD .1. ANALYSIS OF DIFFERENTIAL-EQUATIONS OF A THERMALLY STIMULATED CURRENT

The effects of various parameters on the solution of the thermally sti mulated current rate equations describing trapping and emission of cha rge carriers in the band gap of a semiconductor are discussed in detai l. The software package supporting a single-level model can be used to analyze thermally stimulated currents (TSCs) in semiconductors. The e ffects of instrumental and physical parameters on the TSC curve are ex amined. If the fast or slow recapture approximation is justified, the approximate formulas derived in other studies yield reasonable results , and the calculated data virtually coincide with solutions of differe ntial equations. We consider under which conditions one of the approxi mations in question can be approached in experiment, so as to ensure u nambiguous interpretation of the observed n(c)(T) dependences.