Erbium-containing sol-gel films were prepared in porous anodic alumina
. The films were characterized by photoluminescence measurements, scan
ning and transmission electron microscopy techniques, and secondary io
n mass spectrometry. The structures showed efficient luminescence arou
nd 1.54 mu m. The dependence of luminescence intensity on heat-treatme
nt temperature and erbium content was investigated. Erbium-containing
sol was demonstrated to penetrate deep into porous alumina; as a resul
t, photoluminescence intensity increases as the alumina layer thicknes
s increases. The structures fabricated in this work are promising cand
idates for infrared optical converters with peak efficiency at 1.54 mu
m.