SELF-ASSEMBLING INP QUANTUM DOTS FOR RED LASERS

Self-assembling InP quantum dots are prepared by solid source molecula r beam epitaxy. The dots have a diameter of 15 to 50 nm and a height o f 5 to 15 nm depending on the nominally deposited InP layer thickness between 1.5 and 7 ML. Transmission electron microscopy measurements ar e presented to provide information about the structural properties. Th e InP quantum dots are embedded in Ga0.52In0.48P lattice matched to th e GaAs (100) substrate and show a strong and narrow photoluminescence at room temperature in the visible range. Laser structures are prepare d with one layer of. InP quantum dots within a 160 nm thick Ca0.52In0. 48P waveguide region. 0.7 mu m thick AIInP layers are used as cladding layers below and above the waveguide. We observe lasing of the InP qu antum dots at room temperature in optically pumped cleaved samples wit h a length of 500 mu m.