MANIPULATING INAS ISLAND SIZES WITH CHEMICAL BEAM EPITAXY GROWTH ON GAAS PATTERNS

We demonstrate the manipulation of InAs island size through growth on patterned GaAs substrates. Using chemical beam epitaxy, we deposited i slands on patterns consisting of concentric circular trenches. One sam ple was left uncapped for atomic force microscopy, and another was cap ped with GaAs for micro-photoluminescence. Luminescence images taken a t particular energies show that at different orientations along the ci rcular arcs, the islands have different luminescence energies and thus different sizes. In correlating the island distributions found by ato mic force microscopy images with the luminescence, we conclude that th e InAs islands that form it. high-density one-dimensional chains are s maller than those that are not in chains.