MBE GROWTH AND MAGNETOTUNNELING TRANSPORT-PROPERTIES OF A SINGLE GAASALAS/GAAS BARRIER INCORPORATING INAS QUANTUM DOTS/

We describe the growth and investigation of a novel type of structure in which self-organised InAs quantum dots are incorporated in the AlAs tunnelling: barrier of an n-i-n single-barrier GaAs/AlAs/GaAs heteros tructure. The low temperature current-voltage curves exhibit a series of pronounced peaks which are absent in a control sample grown without InAs in the barrier. By studying their behaviour in a magnetic field B, we attribute these peaks to single-electron tunnelling through sing le discrete zero-dimensional states of individual InAs dots in the bar rier.