UHV-AFM STUDY OF MBE-GROWN 10 NM SCALE RIDGE QUANTUM WIRES

We evaluate the shape of ridge quantum wires (RQWIs) with nm-scale res olution by using SEM and ultra-high vacuum (UHV) AFM system which is c onnected to MBE chamber. This MBE-AFM system provides us a detailed in formation about the evolution of size and uniformity of ridges grown u nder various conditions. In this report, we investigate systematically how the growth temperature T-s and As flux affect the width and morph ology of GaAs ridge structure. The results show that a very sharp and uniform GaAs ridge structures (W < 10 nm) can be obtained. Ou the basi s of this understanding, we fabricated the ridge quantum wire of 10 nm width.