MBE GROWTH OF HIGH-POWER INASSB INALASSB QUANTUM-WELL DIODE-LASERS EMITTING AT 3.5 MU-M/

Molecular beam epitaxy (MBE) has been employed for the growth of strai ned quantum-well laser structures on InAs substrates. These lasers con sist of compressively strained InAsSb wells, tensile-strained InAlAsSb barriers, and lattice-matched AlAsSb cladding layers. Broad-stripe la sers, with emission at wavelengths between 3.2 and 3.55 mu m, have exh ibited cw power of 215 mW/facet at 80 K, pulsed threshold current dens ity as low as 30 A/cm(2) at 80 K, characteristic temperatures (T-0) be tween 30 and 40 K, and maximum pulsed operating temperature of 225 K. Ridge-waveguide lasers have cw threshold current of 12 mA at 100 K, an d a maximum cw operating temperature of 175 K. In this paper we will p resent some of the key issues regarding the MBE growth of such high-po wer lasers on InAs and discuss future directions for improved device p erformance.