LARGE MISMATCH HETEROEPITAXY OF INSB ON SI(111) SUBSTRATES USING CAF2BUFFER LAYERS

The results of initial attempts to grow large lattice-mismatched InSb/ Si structures using CaF2 buffer layers are reported. Substrate tempera tures in the range of 300-400 degrees C were used and MBE growth was i nitiated by opening the In and Sb shutters simultaneously, producing I n-terminated InSb(1 1 1)-A surfaces on Sill Il)substrates. High struct ural quality was confirmed by reflection high-energy electron diffract ion, electron channeling and high-resolution X-ray diffraction. Electr on mobility as high as 65 000 cm(2)/(V s) for a density of similar to 2 x 10(16) cm(-3) was measured at room temperature for an 8 mu m-thick InSb layer grown on CaF2/Si(111).