IMPROVED HOLE TRANSPORT-PROPERTIES OF HIGHLY STRAINED IN0.35GA0.65AS CHANNEL DOUBLE-MODULATION-DOPED STRUCTURES GROWN BY MBE ON GAAS

Authors
KUDO M MATSUMOTO H TANIMOTO T MISHIMA T OHBU I
Citation
M. Kudo et al., IMPROVED HOLE TRANSPORT-PROPERTIES OF HIGHLY STRAINED IN0.35GA0.65AS CHANNEL DOUBLE-MODULATION-DOPED STRUCTURES GROWN BY MBE ON GAAS, Journal of crystal growth, 175, 1997, pp. 910-914
Citations number
14
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
175
Year of publication
1997
Part
2
Pages
910 - 914
Database
ISI
SICI code
0022-0248(1997)175:<910:IHTOHS>2.0.ZU;2-0
Abstract
Hole transport properties have been improved by using highly strained In0.35Ga0.65As channel double-modulation-doped heterostructures grown by molecular beam epitaxy. This structure provided both a high mobilit y of 354 cm(2)/(V s) and a high sheet hole concentration of 1.23 x 10( 12) cm(-2) at room temperature. Double-modulation-doped field effect t ransistors with a 0.4-mu m gate length and a 20-mu m gate width were f abricated. Transconductance of 118 mS/mm, which is about 1.5 times hig her than that of single-modulation-doped field-effect transistors, was obtained at room temperature.