RESONANT-TUNNELING OF HOLES IN DOUBLE-BARRIER HETEROSTRUCTURES GROWN BY MBE ON (110)-ORIENTED GAAS SUBSTRATES

Authors
HENINI M HAYDEN RK TAKAMASU T MIURA N EAVES L HILL G
Citation
M. Henini et al., RESONANT-TUNNELING OF HOLES IN DOUBLE-BARRIER HETEROSTRUCTURES GROWN BY MBE ON (110)-ORIENTED GAAS SUBSTRATES, Journal of crystal growth, 175, 1997, pp. 919-923
Citations number
16
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
175
Year of publication
1997
Part
2
Pages
919 - 923
Database
ISI
SICI code
0022-0248(1997)175:<919:ROHIDH>2.0.ZU;2-S
Abstract
Hole tunnelling in Be-doped GaAs/AlAs double barrier quantum well stru ctures, grown by molecular beam epitaxy on the (110) GaAs surface, hav e been investigated. Fewer resonances are observed in the current-volt age characteristic of the device than in the characteristics of simila r devices grown on (100) and (311)A oriented substrates. High magnetic fields are used to examine the anisotropic in-plane energy dispersion of the QW states of the (110) diode. The dispersion of one of the res onances is found to be much greater than has been observed in (100) an d (311)A oriented devices.