PHOTOLUMINESCENCE CHARACTERIZATION OF MBE GROWN ALGAAS INGAAS/GAAS PSEUDOMORPHIC HEMTS/

We compare the experimental and theoretical photoluminescence (PL) spe ctra of power and low-noise pseudomorphic AlGaAs/InGaAs high electron mobility transistor (HEMT) profiles. The modeling approach uses a self -consistent solution between Schrodinger equation and Poisson's equati on to calculate the electron and hole energy levels, envelope function s, and concentrations. Results are in good agreement with 4.2 K photol uminescence measurements. PL spectra of the HEMTs show two peaks due t o transitions between the e1-hh1 and e2-hh1 channel states. For the lo w-noise profile, the intensity of the e2-hh1 transition is greater tha n the el-hh I transition intensity while for the power profile, the e1 -hh1 transition intensity is greater. The difference in intensities be tween the low-noise and power profiles is due to differences in the do ping of the profiles.