IMPROVED ELECTROABSORPTION PROPERTIES IN 1.3 MU-M MQW WAVE-GUIDE MODULATORS BY A MODIFIED DOPING PROFILE

In 1.3 mu m electroabsorption (EA) waveguide modulators used for micro wave photonic links, we have used a modified doping profile to provide a better confinement of the depletion region in the p-i-n structure u nder reverse bias, without causing serious free carrier absorption. Th eoretical simulation of the electric field distribution and experiment al result on surface-normal photocurrent measurement, as well as waveg uide measurement, are shown in this paper. An improvement of 29% of th e quantum confined Stark effect (QCSE) is obtained, and in the wavegui de measurement, 15% improvement of the transmission-voltage slope effi ciency is achieved.