GaAs-based diluted magnetic semiconductor, (Ga, Mn)As, with Mn composi
tion x up to 0.07 was prepared by molecular-beam epitaxy on GaAs subst
rate at temperatures ranging from 160 to 320 degrees C. Clear reflecti
on high-energy electron diffraction oscillations were observed at the
initial growth stage, indicating that the growth mode is two-dimension
al. The lattice constant of (Ga, Mn)As films determined by X-ray diffr
action showed a linear increase with the increase of Mn composition. W
ell-aligned in-plane ferromagnetic order was observed by magnetization
measurements. Magnetotransport measurements also revealed the presenc
e of ferromagnetic order in the (Gz, Mn)As layer. The easy axis of mag
netization can be reversed by changing the strain direction in (Ga, Mn
)As. GaAs/(Ga, Mn)As superlattice structures with high crystal perfect
ion and good interface quality were also prepared.