EPITAXY OF (GA, MN)AS, A NEW DILUTED MAGNETIC SEMICONDUCTOR-BASED ON GAAS

Citation
A. Shen et al., EPITAXY OF (GA, MN)AS, A NEW DILUTED MAGNETIC SEMICONDUCTOR-BASED ON GAAS, Journal of crystal growth, 175, 1997, pp. 1069-1074
Citations number
16
Categorie Soggetti
Crystallography
Journal title
ISSN journal
00220248
Volume
175
Year of publication
1997
Part
2
Pages
1069 - 1074
Database
ISI
SICI code
0022-0248(1997)175:<1069:EO(MAN>2.0.ZU;2-N
Abstract
GaAs-based diluted magnetic semiconductor, (Ga, Mn)As, with Mn composi tion x up to 0.07 was prepared by molecular-beam epitaxy on GaAs subst rate at temperatures ranging from 160 to 320 degrees C. Clear reflecti on high-energy electron diffraction oscillations were observed at the initial growth stage, indicating that the growth mode is two-dimension al. The lattice constant of (Ga, Mn)As films determined by X-ray diffr action showed a linear increase with the increase of Mn composition. W ell-aligned in-plane ferromagnetic order was observed by magnetization measurements. Magnetotransport measurements also revealed the presenc e of ferromagnetic order in the (Gz, Mn)As layer. The easy axis of mag netization can be reversed by changing the strain direction in (Ga, Mn )As. GaAs/(Ga, Mn)As superlattice structures with high crystal perfect ion and good interface quality were also prepared.