Chemical beam epitaxy is well suited for monolithic integration due to
its mask selective growth. We have grown embedded GaInAsP/GaInAsP SCH
MQW laser structures in grooves in InP substrates etched by ECR-RIE u
sing CH2/H-2 with Si3N4 masks. both, for etching and selective growth.
Our laser structure consisted of six compressively strained quaternar
y MQWs, quaternary barriers (lambda = 1.2 mu m) and confinement layers
(lambda = 1.1 mu m). Selectively grown stripe lasers in 4 mu m wide g
rooves showed threshold currents of 16 mA for a length of 280 mu m. No
change in composition of the quaternary core appeared for lasers in 7
and 30 mu m wide grooves, when compared with lasers on planar substra
tes. Quantum wells grown in narrow 4 mu m wide grooves, on the other h
and showed wavelength shifts depending on substrate misorientation. A
10 nm redshift is observed on (100) substrates oriented 2 degrees off
towards the next [110] direction,whereas a slight blueshift on (100) e
xact oriented substrates occurred.