CBE OF 1.55 MU-M (GAIN)(ASP) LASERS FOR MONOLITHIC INTEGRATION

Citation
A. Nutsch et al., CBE OF 1.55 MU-M (GAIN)(ASP) LASERS FOR MONOLITHIC INTEGRATION, Journal of crystal growth, 175, 1997, pp. 1200-1204
Citations number
4
Categorie Soggetti
Crystallography
Journal title
ISSN journal
00220248
Volume
175
Year of publication
1997
Part
2
Pages
1200 - 1204
Database
ISI
SICI code
0022-0248(1997)175:<1200:CO1M(L>2.0.ZU;2-S
Abstract
Chemical beam epitaxy is well suited for monolithic integration due to its mask selective growth. We have grown embedded GaInAsP/GaInAsP SCH MQW laser structures in grooves in InP substrates etched by ECR-RIE u sing CH2/H-2 with Si3N4 masks. both, for etching and selective growth. Our laser structure consisted of six compressively strained quaternar y MQWs, quaternary barriers (lambda = 1.2 mu m) and confinement layers (lambda = 1.1 mu m). Selectively grown stripe lasers in 4 mu m wide g rooves showed threshold currents of 16 mA for a length of 280 mu m. No change in composition of the quaternary core appeared for lasers in 7 and 30 mu m wide grooves, when compared with lasers on planar substra tes. Quantum wells grown in narrow 4 mu m wide grooves, on the other h and showed wavelength shifts depending on substrate misorientation. A 10 nm redshift is observed on (100) substrates oriented 2 degrees off towards the next [110] direction,whereas a slight blueshift on (100) e xact oriented substrates occurred.