GSMBE GROWTH AND CHARACTERIZATION OF INXGA1-XAS INP STRAINED-LAYER MQWS IN A P-I-N CONFIGURATION/

InxGa1-xAs/InP (0.39 less than or equal to x less than or equal to 0.6 8) strained-layer quantum wells having 20 wells with thickness of 50 A ngstrom in a P-i-N configuration were grown by gas source molecular be am epitaxy (GSMBE). High-resolution X-ray diffraction rocking curves s how the presence of up to seven orders of sharp and intense satellite reflection, indicative of the structural perfection of the samples. Lo w-temperature photoluminescence and low-temperature absorption spectra were used to determine the exciton transition energies as a function of strain. Good agreement is achieved between exciton transition energ ies obtained experimentally at low temperature with those calculated u sing the deformation potential theory.