MORPHOLOGY OF MBE GROWN INAS FILMS STUDIED BY ATOMIC-FORCE MICROSCOPE

The morphology of MBE grown InAs films on GaSb buffered GaAs(001) subs trates with miscuts ranging between 0.2 degrees and 4 degrees has been studied by atomic force microscope (AFM). Step flow growth mode on no minal singular (100) substrates has been observed for samples grown at substrate temperatures higher than 500 degrees C and for samples on m iscut substrates grown at temperatures between 400 degrees C and 530 d egrees C. Unstable growth mode has been observed on nominal singular ( 001) substrates when substrate temperatures are lower than 450 degrees C. Relatively high density pits have also been observed on InAs surfa ces with nucleation temperatures above 450 degrees C.