Authors:
SELVASEKARAPANDIAN S
VIVEKANANDAN K
KOLANDAIVEL P
GUNDURAO TK
Citation: S. Selvasekarapandian et al., VIBRATIONAL STUDIES OF BIS(THIOUREA) CADMIUM CHLORIDE AND TRIS(THIOUREA) ZINC-SULFATE SEMIORGANIC NONLINEAR-OPTICAL CRYSTALS, Crystal research and technology, 32(2), 1997, pp. 299-309
Citation: Hr. Xia et al., GROWTH AND PROPERTIES OF TETRAGONAL TUNGSTEN BRONZE TYPE POTASSIUM LITHIUM-NIOBATE SINGLE-CRYSTALS, Crystal research and technology, 32(2), 1997, pp. 311-317
Authors:
WANG JY
LIU YG
WEI JQ
JIANG MH
SHAO ZS
LIU WJ
JIANG SS
Citation: Jy. Wang et al., GROWTH, CHARACTERIZATION AND NONCRITICAL PHASE-MATCHING OF NIOBIUM-DOPED KTP CRYSTALS, Crystal research and technology, 32(2), 1997, pp. 319-327
Citation: Ak. Guha et al., X-RAY LANG TOPOGRAPHY AND INFRARED-SPECTROSCOPY IN QUARTZ CRYSTALS GROWN HYDROTHERMALLY WITH INTERMITTENT RUNS, Crystal research and technology, 32(2), 1997, pp. 329-337
Citation: S. Joseph et al., INFRARED SPECTROSCOPIC AND THERMAL STUDIES OF GEL-GROWN SPHERULITIC CRYSTALS OF IRON TARTRATE, Crystal research and technology, 32(2), 1997, pp. 339-346
Citation: R. Rudert et G. Schmaucks, CRYSTAL AND MOLECULAR-STRUCTURE OF ETHYL-3-[TRIS(TRIMETHYLSILOXANYL)SILYL]PYRROLINIUM HYDROCHLORIDE, Crystal research and technology, 32(2), 1997, pp. 347-352
Citation: H. Korner et P. Zugenmaier, THE CRYSTAL AND MOLECULAR-STRUCTURE OF MESOGENIC MALONATES .2., Crystal research and technology, 32(2), 1997, pp. 353-367
Citation: P. Gornert, CRYSTAL-GROWTH AND CRYSTALLINE LAYERS OF HIGH-TEMPERATURE SUPERCONDUCTORS - CHARACTERIZATION AND APPLICATION, Crystal research and technology, 32(1), 1997, pp. 7-33
Authors:
RUDOLPH P
NEUBERT M
ARULKUMARAN S
SEIFERT M
Citation: P. Rudolph et al., VAPOR-PRESSURE CONTROLLED CZOCHRALSKI (VCZ) GROWTH - A METHOD TO PRODUCE ELECTRONIC MATERIALS WITH LOW DISLOCATION DENSITY, Crystal research and technology, 32(1), 1997, pp. 35-50
Citation: P. Dold et Kw. Benz, MODIFICATION OF FLUID-FLOW AND HEAT-TRANSPORT IN VERTICAL BRIDGMAN CONFIGURATIONS BY ROTATING MAGNETIC-FIELDS, Crystal research and technology, 32(1), 1997, pp. 51-60
Authors:
SCHULZ D
WOLLWEBER J
DAROWSKI N
SCHRODER W
Citation: D. Schulz et al., AXIAL TEMPERATURE DISTRIBUTION IN SILICON-GERMANIUM GROWN BY THE RF-HEATED FLOAT-ZONE TECHNIQUE, Crystal research and technology, 32(1), 1997, pp. 61-68
Authors:
GOTTSCHALCH V
FRANZHELD R
PIETZONKA I
SCHWABE R
BENNDORF G
WAGNER G
Citation: V. Gottschalch et al., MOVPE GROWTH OF SPONTANEOUSLY ORDERED (GAIN) AND (ALIN)P LAYERS LATTICE-MATCHED TO GAAS SUBSTRATES, Crystal research and technology, 32(1), 1997, pp. 69-82
Citation: J. Nyvlt et J. Hostomsky, GRAPHICAL REPRESENTATION OF VARIOUS MODELS FOR CRYSTAL SIZE DISTRIBUTION IN CONTINUOUS-FLOW CRYSTALLIZERS, Crystal research and technology, 32(1), 1997, pp. 83-90
Citation: G. Tzolova et al., DETECTION AND STUDY OF STRUCTURAL PHASE-TRANSFORMATIONS IN CESIUM AMIDOSULFONATE, Crystal research and technology, 32(1), 1997, pp. 91-98
Authors:
PELZL G
DIELE S
LOSE D
OSTROVSKI BI
WEISSFLOG W
Citation: G. Pelzl et al., THE INFLUENCE OF THE SHAPE AND THE INCOMPATIBILITY OF MOLECULAR MOIETIES ON THE STRUCTURE OF SMECTIC MESOPHASES, Crystal research and technology, 32(1), 1997, pp. 99-109
Citation: M. Lazar et G. Wagner, CALCULATION OF DISPLACEMENT-FIELDS AND SIMULATION OF HRTEM IMAGES OF DISLOCATIONS IN SPHALERITE TYPE A(III)B(V) COMPOUND SEMICONDUCTORS, Crystal research and technology, 32(1), 1997, pp. 111-124
Citation: D. Zymierska et J. Auleytner, APPLICATION OF X-RAYS TO THE STUDY OF THE SURFACE-ROUGHNESS, Crystal research and technology, 32(1), 1997, pp. 135-141
Citation: Nn. Sirota et Im. Sirota, ATOMIZATION ENERGY OF THE CU, AG, AU CRYSTALS IN TERMS OF THE STATISTICAL-MODEL, Crystal research and technology, 32(1), 1997, pp. 143-148
Citation: G. Berg et P. Grau, MEYERS HARDNESS LAW AND ITS RELATION TO OTHER MEASURES OF BALL HARDNESS TESTS, Crystal research and technology, 32(1), 1997, pp. 149-154
Citation: Mv. Yakushev et al., MODIFICATION OF THE CUINSE2 CRYSTAL-SURFACE DURING POLISHING AND ANNEALING, Crystal research and technology, 32(1), 1997, pp. 155-161