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Results: 1-10 |
Results: 10
URBACH-MARTIENSSEN TAILS IN ER-DOPED AND UNDOPED N-TYPE INSE
Authors: ABAY B GUDER HS EFEOGLU H YOGURTCU YK
Citation: B. Abay et al., URBACH-MARTIENSSEN TAILS IN ER-DOPED AND UNDOPED N-TYPE INSE, Physica. B, Condensed matter, 254(1-2), 1998, pp. 148-155
GROWTH AND OPTICAL-PROPERTIES OF HO DOPED N-TYPE INDIUM SELENIDE
Authors: GURBULAK B YILDIRIM M ABAY B TUZEMEN S ALIEVA M YOGURTCU YK
Citation: B. Gurbulak et al., GROWTH AND OPTICAL-PROPERTIES OF HO DOPED N-TYPE INDIUM SELENIDE, Physica status solidi. a, Applied research, 168(2), 1998, pp. 495-500
LOW-TEMPERATURE PHOTOLUMINESCENCE OF N-INSE LAYER SEMICONDUCTOR CRYSTALS
Authors: ABAY B EFEOGLU H YOGURTCU YK
Citation: B. Abay et al., LOW-TEMPERATURE PHOTOLUMINESCENCE OF N-INSE LAYER SEMICONDUCTOR CRYSTALS, Materials research bulletin, 33(9), 1998, pp. 1401-1410
INFLUENCE OF TEMPERATURE AND PHASE-TRANSITIONS ON THE URBACHS TAILS OF ABSORPTION-SPECTRA FOR TLINS2 SINGLE-CRYSTALS
Authors: ABAY B GUDER HS EFEOGLU H YOGURTCU YK
Citation: B. Abay et al., INFLUENCE OF TEMPERATURE AND PHASE-TRANSITIONS ON THE URBACHS TAILS OF ABSORPTION-SPECTRA FOR TLINS2 SINGLE-CRYSTALS, Journal of applied physics, 84(7), 1998, pp. 3872-3879
CHARACTERISTICS OF METALLIC POLYMER AND AU SCHOTTKY CONTACTS ON CLEAVED SURFACES OF INSE(ER)
Authors: ABAY B ONGANER Y SAGLAM M EFEOGLU H TURUT A YOGURTCU YK
Citation: B. Abay et al., CHARACTERISTICS OF METALLIC POLYMER AND AU SCHOTTKY CONTACTS ON CLEAVED SURFACES OF INSE(ER), Solid-state electronics, 41(6), 1997, pp. 924-926
ELECTROTHERMAL INVESTIGATION OF THE SWITCHING EFFECT IN P-TYPE TLINSE2, TLINTE2, AND TLGATE2, CHAIN CHALCOGENIDE SEMICONDUCTORS
Authors: ABAY B GURBULAK B YILDIRIM M EFEOGLU H TUZEMEN S YOGURTCU YK
Citation: B. Abay et al., ELECTROTHERMAL INVESTIGATION OF THE SWITCHING EFFECT IN P-TYPE TLINSE2, TLINTE2, AND TLGATE2, CHAIN CHALCOGENIDE SEMICONDUCTORS, Journal of electronic materials, 25(7), 1996, pp. 1054-1059
TEMPERATURE-DEPENDENCE OF MAGNETORESISTANCE IN NEUTRON-IRRADIATED ANDUNIRRADIATED HIGH-RESISTIVITY P-TYPE SILICON
Authors: YILDIRIM M EFEOGLU H ABAY B YOGURTCU YK
Citation: M. Yildirim et al., TEMPERATURE-DEPENDENCE OF MAGNETORESISTANCE IN NEUTRON-IRRADIATED ANDUNIRRADIATED HIGH-RESISTIVITY P-TYPE SILICON, Physica status solidi. a, Applied research, 153(2), 1996, pp. 473-480
ELECTROTHERMAL INVESTIGATION OF THE SWITCHING PHENOMENA IN P-TYPE TLINSE2 SINGLE-CRYSTALS
Authors: ABAY B GURBULAK B YILDIRIM M EFEOGLU H YOGURTCU YK
Citation: B. Abay et al., ELECTROTHERMAL INVESTIGATION OF THE SWITCHING PHENOMENA IN P-TYPE TLINSE2 SINGLE-CRYSTALS, Physica status solidi. a, Applied research, 153(1), 1996, pp. 145-151
TEMPERATURE-DEPENDENCE OF GALVANOMAGNETIC PROPERTIES FOR ER-DOPED ANDUNDOPED N-TYPE INSE
Authors: YILDIRIM M GURBULAK B ABAY B EFEOGLU H TUZEMEN S YOGURTCU YK
Citation: M. Yildirim et al., TEMPERATURE-DEPENDENCE OF GALVANOMAGNETIC PROPERTIES FOR ER-DOPED ANDUNDOPED N-TYPE INSE, Journal of applied physics, 80(8), 1996, pp. 4437-4441
INTERPRETING THE NONIDEAL REVERSE BIAS C-V CHARACTERISTICS AND IMPORTANCE OF THE DEPENDENCE OF SCHOTTKY-BARRIER HEIGHT ON APPLIED VOLTAGE
Authors: TURUT A SAGLAM M EFEOGLU H YALCIN N YILDIRIM M ABAY B
Citation: A. Turut et al., INTERPRETING THE NONIDEAL REVERSE BIAS C-V CHARACTERISTICS AND IMPORTANCE OF THE DEPENDENCE OF SCHOTTKY-BARRIER HEIGHT ON APPLIED VOLTAGE, Physica. B, Condensed matter, 205(1), 1995, pp. 41-50
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