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Citation: As. Abramov et al., ION-BOMBARDMENT OF AMORPHOUS-SILICON FILMS DURING PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION IN AN RF DISCHARGE, Technical physics, 43(2), 1998, pp. 180-187

Authors: TEWS R SUCHANECK G KOTTWITZ A ABRAMOV AS KOSAREV AI

Citation: R. Tews et al., ALTERNATIVE DOPED A-SI1-XCX-H AND NC-SI1-XCX-H FILMS, Journal of non-crystalline solids, 230, 1998, pp. 478-482

Authors: KOSAREV AI SMIMOV AS ABRAMOV AS VINOGRADOV AJ USTAVSCHIKOV AY SHUTOV MV

Citation: Ai. Kosarev et al., EFFECT OF ION-BOMBARDMENT IN VERY-HIGH FREQUENCY GLOW-DISCHARGE ON GROWTH AND PROPERTIES OF SIHX FILMS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(2), 1997, pp. 298-306

Authors: ABRAMOV AS VINOGRADOV AY GOLUBEV VG KOSAREV AI MATYUSHKINA MA PATSEKIN AV

Citation: As. Abramov et al., A STUDY OF AMORPHOUS HYDROGENATED SILICON-NITRIDE FILMS PRODUCED IN THE PLASMA OF A HIGH-FREQUENCY DISCHARGE, Semiconductors, 30(11), 1996, pp. 1011-1014