ACNP - Italian Periodicals Catalogue

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Results: 1-12 |

Results: 12

TEMPERATURE-DEPENDENCE OF SIGE HBT STATIC AND DYNAMIC CHARACTERISTICS

Authors: ANIEL F ZEROUNIAN N GRUHLE A MAHNER C VERNET G ADDE R

Citation: F. Aniel et al., TEMPERATURE-DEPENDENCE OF SIGE HBT STATIC AND DYNAMIC CHARACTERISTICS, Journal de physique. IV, 8(P3), 1998, pp. 81-86

ENHANCEMENTS AND DEGRADATIONS IN ULTRASHORT GATE GAAS AND INP HEMTS PROPERTIES AT CRYOGENIC TEMPERATURES - AN OVERVIEW

Authors: ANIEL F SYLVESTRE A JIN Y CROZAT P DELUSTRAC A ADDE R

Citation: F. Aniel et al., ENHANCEMENTS AND DEGRADATIONS IN ULTRASHORT GATE GAAS AND INP HEMTS PROPERTIES AT CRYOGENIC TEMPERATURES - AN OVERVIEW, Journal de physique. IV, 6(C3), 1996, pp. 145-149

LOW-TEMPERATURE ELECTROLUMINESCENCE SPECTROSCOPY OF HIGH-ELECTRON-MOBILITY TRANSISTORS ON INP

Authors: SYLVESTRE A ANIEL F BOUCAUD P JULIEN FH CROZAT P DELUSTRAC A ADDE R JIN Y PRASEUTH JP

Citation: A. Sylvestre et al., LOW-TEMPERATURE ELECTROLUMINESCENCE SPECTROSCOPY OF HIGH-ELECTRON-MOBILITY TRANSISTORS ON INP, Journal of applied physics, 80(1), 1996, pp. 464-469

CHARACTERISTICS OF GAAS ALGAAS HEMTS FABRICATED BY X-RAY-LITHOGRAPHY/

Authors: LAFONTAINE H HAGHIRIGOSNET AM JIN Y CROZAT P ADDE R CHAKER M PEPIN H ROUSSEAUX F LAUNOIS H

Citation: H. Lafontaine et al., CHARACTERISTICS OF GAAS ALGAAS HEMTS FABRICATED BY X-RAY-LITHOGRAPHY/, I.E.E.E. transactions on electron devices, 43(1), 1996, pp. 175-178

NONISOTHERMAL QUASI-BIDIMENSIONAL ENERGY-BALANCE MODEL

Authors: LEPAUL S ANIEL F PEYMAYECHE L DELUSTRAC A BOUILLAULT F ADDE R

Citation: S. Lepaul et al., NONISOTHERMAL QUASI-BIDIMENSIONAL ENERGY-BALANCE MODEL, Electronics Letters, 32(7), 1996, pp. 692-694

ELECTROLUMINESCENCE SPECTROSCOPY OF ALGAAS INGAAS AND ALGAAS/GAAS HIGH-ELECTRON-MOBILITY TRANSISTORS/

Authors: ANIEL F BOUCAUD P SYLVESTRE A CROZAT P JULIEN FH ADDE R JIN Y

Citation: F. Aniel et al., ELECTROLUMINESCENCE SPECTROSCOPY OF ALGAAS INGAAS AND ALGAAS/GAAS HIGH-ELECTRON-MOBILITY TRANSISTORS/, Journal of applied physics, 77(5), 1995, pp. 2184-2189

LOW-TEMPERATURE LOW-VOLTAGE OPERATION OF HEMTS ON INP

Authors: SYLVESTRE A CROZAT P ADDE R DELUSTRAC A JIN Y

Citation: A. Sylvestre et al., LOW-TEMPERATURE LOW-VOLTAGE OPERATION OF HEMTS ON INP, Journal de physique. IV, 4(C6), 1994, pp. 153-158

HIGH-ELECTRIC-FIELD TRANSPORT EFFECTS ON LOW-TEMPERATURE OPERATION OFPSEUDOMORPHIC HEMTS

Authors: ANIEL F CROZAT P DELUSTRAC A ADDE R JIN Y

Citation: F. Aniel et al., HIGH-ELECTRIC-FIELD TRANSPORT EFFECTS ON LOW-TEMPERATURE OPERATION OFPSEUDOMORPHIC HEMTS, Journal de physique. IV, 4(C6), 1994, pp. 171-176

SCALING BEHAVIOR OF DELTA-DOPED ALGAAS INGAAS HIGH-ELECTRON-MOBILITY TRANSISTORS WITH GATELENGTHS DOWN TO 60 NM AND SOURCE-DRAIN GAPS DOWN TO 230 NM/

Authors: VANHOVE M ZOU G DERAEDT W JANSEN P JONCKHEERE R VANROSSUM M HOOLE ACF ALLEE DR BROERS AN CROZAT P JIN Y ANIEL F ADDE R

Citation: M. Vanhove et al., SCALING BEHAVIOR OF DELTA-DOPED ALGAAS INGAAS HIGH-ELECTRON-MOBILITY TRANSISTORS WITH GATELENGTHS DOWN TO 60 NM AND SOURCE-DRAIN GAPS DOWN TO 230 NM/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(4), 1993, pp. 1203-1208

PICOSECOND PULSE SHAPING AND COMPRESSION WITH FETS

Authors: HAFDALLAH H OUSLIMANI A VERNET G ADDE R

Citation: H. Hafdallah et al., PICOSECOND PULSE SHAPING AND COMPRESSION WITH FETS, Electronics Letters, 29(4), 1993, pp. 414-415

CRYOGENIC INVESTIGATION OF GATE LEAKAGE AND RF PERFORMANCES DOWN TO 50K OF 0.2-MU-M ALLNAS GAINAS/INP HEMTS/

Authors: SYLVESTRE A CROZAT P ADDE R DELUSTRAC A JIN Y HARMAND JC QUILLEC M

Citation: A. Sylvestre et al., CRYOGENIC INVESTIGATION OF GATE LEAKAGE AND RF PERFORMANCES DOWN TO 50K OF 0.2-MU-M ALLNAS GAINAS/INP HEMTS/, Electronics Letters, 29(24), 1993, pp. 2152-2154

GATE LENGTH ELECTRIC PARAMETER DEPENDENCES OF ULTRA-SUBMICROMETER DELTA-DOPED PSEUDOMORPHIC HEMTS

Authors: ANIEL F JINDELORME Y CROZAT P DELUSTRAC A ADDE R VANHOVE M DERAEDT W VANROSSUM M JIN Y LAUNOIS H

Citation: F. Aniel et al., GATE LENGTH ELECTRIC PARAMETER DEPENDENCES OF ULTRA-SUBMICROMETER DELTA-DOPED PSEUDOMORPHIC HEMTS, Electronics Letters, 29(17), 1993, pp. 1570-1571

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