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Results: 26-50/52
Authors:
ARKHIPOV VI
ADRIAENSSENS GJ
Citation: Vi. Arkhipov et Gj. Adriaenssens, LOW-TEMPERATURE RELAXATIONS OF CHARGE-CARRIERS IN DISORDERED HOPPING SYSTEMS, Journal of physics. Condensed matter, 8(42), 1996, pp. 7909-7916
Authors:
ARKHIPOV VI
ADRIAENSSENS GJ
Citation: Vi. Arkhipov et Gj. Adriaenssens, EQUILIBRIUM TRAP-CONTROLLED CARRIER MOBILITY IN SYSTEMS OF RANDOMLY FLUCTUATING LOCALIZED STATES, Philosophical magazine letters, 73(5), 1996, pp. 263-269
Authors:
ARKHIPOV VI
ADRIAENSSENS GJ
Citation: Vi. Arkhipov et Gj. Adriaenssens, ENERGY-LEVEL DYNAMICS OF DEEP GAP STATES IN HYDROGENATED AMORPHOUS-SILICON UNDER ILLUMINATION, Physical review. B, Condensed matter, 54(23), 1996, pp. 16696-16700
Authors:
ARKHIPOV VI
ADRIAENSSENS GJ
YAN BJ
Citation: Vi. Arkhipov et al., TEMPERATURE-DEPENDENT DISTRIBUTIONS OF ACTIVATION-ENERGIES IN AMORPHOUS-SEMICONDUCTORS, Solid state communications, 100(7), 1996, pp. 471-475
Authors:
ADRIAENSSENS GJ
GHEORGHIU A
SENEMAUD C
QAMHIEH N
BOLLE N
SLEECKX E
NAGELS P
Citation: Gj. Adriaenssens et al., COMPARISON BETWEEN ELECTRICAL-PROPERTIES AND ELECTRONIC-STRUCTURE OF VARIOUSLY-PREPARED GERMANIUM SELENIDE FILMS, Journal of non-crystalline solids, 200, 1996, pp. 675-679
Authors:
TIKHOMIROV VK
LIEVENS P
QAMHIEH N
ADRIAENSSENS GJ
Citation: Vk. Tikhomirov et al., DETECTION OF OPTICAL NONLINEARITIES IN AMORPHOUS-SEMICONDUCTORS BY CAUSTIC CROSSING IN AN INTENSITY-MODULATED LASER-BEAM, Journal of non-crystalline solids, 200, 1996, pp. 119-123
Authors:
BARANOVSKII SD
FABER T
HENSEL F
THOMAS P
ADRIAENSSENS GJ
Citation: Sd. Baranovskii et al., EINSTEINS RELATIONSHIP FOR HOPPING ELECTRONS, Journal of non-crystalline solids, 200, 1996, pp. 214-217
Authors:
ADRIAENSSENS GJ
BARANOVSKII SD
FUHS W
JANSEN J
OKTU O
Citation: Gj. Adriaenssens et al., LIGHT-INTENSITY DEPENDENCE OF EXCESS CARRIER LIFETIMES, Journal of non-crystalline solids, 200, 1996, pp. 271-275
Authors:
ELIAT A
YAN B
ADRIAENSSENS GJ
BEZEMER J
Citation: A. Eliat et al., TIME-OF-FLIGHT AND POST-TRANSIT SPECTROSCOPY OF A-SI1-XCX-H ALLOYS, Journal of non-crystalline solids, 200, 1996, pp. 592-595
Authors:
YAN BJ
HAN DX
ADRIAENSSENS GJ
Citation: Bj. Yan et al., ANALYSIS OF POST-TRANSIT PHOTOCURRENTS AND ELECTROLUMINESCENCE SPECTRA FROM A-SI-H SOLAR-CELLS, Journal of applied physics, 79(7), 1996, pp. 3597-3602
Authors:
ADRIAENSSENS GJ
BARANOVSKII SD
FUHS W
JANSEN J
OKTU O
Citation: Gj. Adriaenssens et al., PHOTOCONDUCTIVITY RESPONSE-TIME IN AMORPHOUS-SEMICONDUCTORS, Physical review. B, Condensed matter, 51(15), 1995, pp. 9661-9667
Authors:
BARANOVSKII SD
THOMAS P
ADRIAENSSENS GJ
Citation: Sd. Baranovskii et al., THE CONCEPT OF TRANSPORT ENERGY AND ITS APPLICATION TO STEADY-STATE PHOTOCONDUCTIVITY IN AMORPHOUS-SILICON, Journal of non-crystalline solids, 190(3), 1995, pp. 283-287
Authors:
YAN B
ADRIAENSSENS GJ
ELIAT A
HAN D
Citation: B. Yan et al., FORWARD CURRENT TRANSIENTS IN AMORPHOUS-SILICON P-I-N STRUCTURES, Journal of non-crystalline solids, 190(1-2), 1995, pp. 85-94
Authors:
BARANOVSKII SD
HENSEL F
RUCKES K
THOMAS P
ADRIAENSSENS GJ
Citation: Sd. Baranovskii et al., POTENTIAL FLUCTUATIONS IN AMORPHOUS-SILICON, Journal of non-crystalline solids, 190(1-2), 1995, pp. 117-122
Authors:
ARKHIPOV VI
ADRIAENSSENS GJ
Citation: Vi. Arkhipov et Gj. Adriaenssens, THERMALLY STIMULATED CURRENTS IN AMORPHOUS-SEMICONDUCTORS, Journal of non-crystalline solids, 181(3), 1995, pp. 274-282
Authors:
YAN BJ
ADRIAENSSENS GJ
Citation: Bj. Yan et Gj. Adriaenssens, ELECTRON-EMISSION FROM DEEP STATES AND EVALUATION OF THE DENSITY-OF-STATES IN A-SI-H, Journal of applied physics, 77(11), 1995, pp. 5661-5668
Authors:
BARANOVSKII SD
ADRIAENSSENS GJ
OKTU O
THOMAS P
Citation: Sd. Baranovskii et al., PHOTOCONDUCTIVITY OF DOPED AMORPHOUS-SEMICONDUCTORS AT LOW-TEMPERATURES, Molecular crystals and liquid crystals science and technology. Section A, Molecular crystals and liquid crystals, 252, 1994, pp. 23-30
Authors:
KOLOBOV AV
ADRIAENSSENS GJ
Citation: Av. Kolobov et Gj. Adriaenssens, ON THE MECHANISM OF PHOTOSTRUCTURAL CHANGES IN AS-BASED VITREOUS CHALCOGENIDES - MICROSCOPIC, DYNAMIC AND ELECTRONIC ASPECTS, Philosophical magazine. B. Physics of condensed matter. Structural, electronic, optical and magnetic properties, 69(1), 1994, pp. 21-30
Authors:
YAN B
ELIAT A
ADRIAENSSENS GJ
Citation: B. Yan et al., EXPERIMENTAL-STUDY OF FORWARD CURRENT TRANSIENTS IN AMORPHOUS-SILICONP-I-N STRUCTURES, Applied physics letters, 65(18), 1994, pp. 2338-2340
Authors:
SCHAUER F
ELIAT A
NESLADEK M
ADRIAENSSENS GJ
Citation: F. Schauer et al., TRANSIENT SPACE-CHARGE-LIMITED CURRENTS - THE TIME-OF-FLIGHT AND POST-TRANSIT ANALYSIS IN HYDROGENATED AMORPHOUS-SILICON, Applied physics letters, 64(22), 1994, pp. 3009-3011
Authors:
OKTU O
TOLUNAY H
ADRIAENSSENS GJ
BARANOVSKII SD
LAUWERENS W
Citation: O. Oktu et al., ELECTRON-DRIFT MOBILITY IN HYDROGENATED AMORPHOUS SI1-XCX WITH A LOW-CARBON CONTENT, Philosophical magazine letters, 68(3), 1993, pp. 173-178
Authors:
DEMICHELIS F
PIRRI CF
TRESSO E
HERREMANS H
GREVENDONK W
ADRIAENSSENS GJ
AMATO G
COSCIA U
Citation: F. Demichelis et al., INVESTIGATION ON ELECTRONIC DENSITY-OF-STATES IN A-SIXC1-X-H FILMS, Applied surface science, 70-1, 1993, pp. 664-668
Authors:
BARANOVSKII SD
THOMAS P
ADRIAENSSENS GJ
OKTU O
Citation: Sd. Baranovskii et al., LOW-TEMPERATURE PHOTOCONDUCTIVITY OF DOPED AMORPHOUS-SEMICONDUCTORS, Solid state communications, 86(9), 1993, pp. 549-551
Authors:
ADRIAENSSENS GJ
OKTU O
Citation: Gj. Adriaenssens et O. Oktu, DRIFT MOBILITY MEASUREMENTS IN A-SI1-XCX-H, Journal of non-crystalline solids, 166, 1993, pp. 1047-1050
Authors:
ELIAT A
JANSEN J
USALA S
ADRIAENSSENS GJ
Citation: A. Eliat et al., TIME-OF-FLIGHT AND CONSTANT-PHOTOCURRENT MEASUREMENTS IN A-SI-S-H ALLOYS, Journal of non-crystalline solids, 166, 1993, pp. 1093-1096