Authors: SAKATA Y NAKAMURA T AE S TERAKADO T INOMOTO Y TORIKAI T HASUMI H

Citation: Y. Sakata et al., SELECTIVE MOVPE GROWTH OF INGAASP AND INGAAS USING TBA AND TBP, Journal of electronic materials, 25(3), 1996, pp. 401-406

Authors: NAKAMURA T AE S TERAKADO T TORIKAI T UJI T

Citation: T. Nakamura et al., HIGHLY CONTROLLED INGAAS(P) INP MQW INTERFACES GROWN BY MOVPE USING TBA AND TBP PRECURSORS/, Journal of electronic materials, 25(3), 1996, pp. 457-461

Authors: TERAKADO T TSURUOKA K ISHIDA T NAKAMURA T FUKUSHIMA K AE S UDA A TORIKAI T UJI T

Citation: T. Terakado et al., SUBMILLIAMP THRESHOLD 1.3-MU-M STRAINED MQW LASERS WITH NOVEL P-SUBSTRATE BURIED-HETEROSTRUCTURE GROWN BY MOVPE USING TBA AND TBP, Electronics Letters, 31(25), 1995, pp. 2182-2184

Authors: AE S TERAKADO T NAKAMURA T TORIKAI T UJI T

Citation: S. Ae et al., LOW-THRESHOLD LAMBDA=1.3 MU-M MULTIQUANTUM-WELL LASER-DIODES GROWN BYMETALORGANIC VAPOR-PHASE EPITAXY USING TERTIARYBUTYLARSINE AND TERTIARYBUTYLPHOSPHINE PRECURSORS, Journal of crystal growth, 145(1-4), 1994, pp. 852-857